APPARATUS AND TECHNIQUES FOR CONTROLLING ION IMPLANTATION UNIFORMITY
이온 주입기내 이온 빔을 제어하는 시스템은 제 1 주파수에서의 이온빔의 복수개의 빔 전류 측정들을 감지하는 검출기 시스템, 복수개의 빔 전류 측정들에 기초하여 이온 빔의 변화를 결정하는 분석 컴포넌트를 포함하고, 변화는 제 1 주파수와 다른 제 2 주파수에서의 이온 빔의 빔 전류 변화에 해당한다. 시스템은 또한 변화를 줄이기 위해서 분석 컴포넌트의 출력에 응답하여 이온 빔을 조정하는 조정 컴포넌트를 포함하되, 분석 컴포넌트 및 조정 컴포넌트는 이온 빔이 이온 주입기내에서 생성되는 동안 이온 빔의 변화를 임계값 아래로 동적으로 줄이도...
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| creator | OLSON JOSEPH C GAMMEL GEORGE M SPRENKLE RICHARD ALLEN SINCLAIR FRANK TODOROV STANISLAV S CHANG SHENGWU TIMBERLAKE DAVID ROGER HUSSEY NORMAN E DECKER LUCKE KURT T |
| description | 이온 주입기내 이온 빔을 제어하는 시스템은 제 1 주파수에서의 이온빔의 복수개의 빔 전류 측정들을 감지하는 검출기 시스템, 복수개의 빔 전류 측정들에 기초하여 이온 빔의 변화를 결정하는 분석 컴포넌트를 포함하고, 변화는 제 1 주파수와 다른 제 2 주파수에서의 이온 빔의 빔 전류 변화에 해당한다. 시스템은 또한 변화를 줄이기 위해서 분석 컴포넌트의 출력에 응답하여 이온 빔을 조정하는 조정 컴포넌트를 포함하되, 분석 컴포넌트 및 조정 컴포넌트는 이온 빔이 이온 주입기내에서 생성되는 동안 이온 빔의 변화를 임계값 아래로 동적으로 줄이도록 구성된다.
A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20160003258A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20160003258A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20160003258A3</originalsourceid><addsrcrecordid>eNrjZHBxDAhwDHIMCQ1WcPRzUQhxdfbw8wwMdQ1WcPMPUnD29wsJ8vfx8fRzV_D091Pw9A3wcfQLcQwBcUL9PIFqfD1DInkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBoZmBgYGxkamFozFxqgA9eC0Y</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>APPARATUS AND TECHNIQUES FOR CONTROLLING ION IMPLANTATION UNIFORMITY</title><source>esp@cenet</source><creator>OLSON JOSEPH C ; GAMMEL GEORGE M ; SPRENKLE RICHARD ALLEN ; SINCLAIR FRANK ; TODOROV STANISLAV S ; CHANG SHENGWU ; TIMBERLAKE DAVID ROGER ; HUSSEY NORMAN E ; DECKER LUCKE KURT T</creator><creatorcontrib>OLSON JOSEPH C ; GAMMEL GEORGE M ; SPRENKLE RICHARD ALLEN ; SINCLAIR FRANK ; TODOROV STANISLAV S ; CHANG SHENGWU ; TIMBERLAKE DAVID ROGER ; HUSSEY NORMAN E ; DECKER LUCKE KURT T</creatorcontrib><description>이온 주입기내 이온 빔을 제어하는 시스템은 제 1 주파수에서의 이온빔의 복수개의 빔 전류 측정들을 감지하는 검출기 시스템, 복수개의 빔 전류 측정들에 기초하여 이온 빔의 변화를 결정하는 분석 컴포넌트를 포함하고, 변화는 제 1 주파수와 다른 제 2 주파수에서의 이온 빔의 빔 전류 변화에 해당한다. 시스템은 또한 변화를 줄이기 위해서 분석 컴포넌트의 출력에 응답하여 이온 빔을 조정하는 조정 컴포넌트를 포함하되, 분석 컴포넌트 및 조정 컴포넌트는 이온 빔이 이온 주입기내에서 생성되는 동안 이온 빔의 변화를 임계값 아래로 동적으로 줄이도록 구성된다.
A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; GAMMA RAY OR X-RAY MICROSCOPES ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; IRRADIATION DEVICES ; METALLURGY ; NUCLEAR ENGINEERING ; NUCLEAR PHYSICS ; PHYSICS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160108&DB=EPODOC&CC=KR&NR=20160003258A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160108&DB=EPODOC&CC=KR&NR=20160003258A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OLSON JOSEPH C</creatorcontrib><creatorcontrib>GAMMEL GEORGE M</creatorcontrib><creatorcontrib>SPRENKLE RICHARD ALLEN</creatorcontrib><creatorcontrib>SINCLAIR FRANK</creatorcontrib><creatorcontrib>TODOROV STANISLAV S</creatorcontrib><creatorcontrib>CHANG SHENGWU</creatorcontrib><creatorcontrib>TIMBERLAKE DAVID ROGER</creatorcontrib><creatorcontrib>HUSSEY NORMAN E</creatorcontrib><creatorcontrib>DECKER LUCKE KURT T</creatorcontrib><title>APPARATUS AND TECHNIQUES FOR CONTROLLING ION IMPLANTATION UNIFORMITY</title><description>이온 주입기내 이온 빔을 제어하는 시스템은 제 1 주파수에서의 이온빔의 복수개의 빔 전류 측정들을 감지하는 검출기 시스템, 복수개의 빔 전류 측정들에 기초하여 이온 빔의 변화를 결정하는 분석 컴포넌트를 포함하고, 변화는 제 1 주파수와 다른 제 2 주파수에서의 이온 빔의 빔 전류 변화에 해당한다. 시스템은 또한 변화를 줄이기 위해서 분석 컴포넌트의 출력에 응답하여 이온 빔을 조정하는 조정 컴포넌트를 포함하되, 분석 컴포넌트 및 조정 컴포넌트는 이온 빔이 이온 주입기내에서 생성되는 동안 이온 빔의 변화를 임계값 아래로 동적으로 줄이도록 구성된다.
A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>GAMMA RAY OR X-RAY MICROSCOPES</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>IRRADIATION DEVICES</subject><subject>METALLURGY</subject><subject>NUCLEAR ENGINEERING</subject><subject>NUCLEAR PHYSICS</subject><subject>PHYSICS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBxDAhwDHIMCQ1WcPRzUQhxdfbw8wwMdQ1WcPMPUnD29wsJ8vfx8fRzV_D091Pw9A3wcfQLcQwBcUL9PIFqfD1DInkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBoZmBgYGxkamFozFxqgA9eC0Y</recordid><startdate>20160108</startdate><enddate>20160108</enddate><creator>OLSON JOSEPH C</creator><creator>GAMMEL GEORGE M</creator><creator>SPRENKLE RICHARD ALLEN</creator><creator>SINCLAIR FRANK</creator><creator>TODOROV STANISLAV S</creator><creator>CHANG SHENGWU</creator><creator>TIMBERLAKE DAVID ROGER</creator><creator>HUSSEY NORMAN E</creator><creator>DECKER LUCKE KURT T</creator><scope>EVB</scope></search><sort><creationdate>20160108</creationdate><title>APPARATUS AND TECHNIQUES FOR CONTROLLING ION IMPLANTATION UNIFORMITY</title><author>OLSON JOSEPH C ; GAMMEL GEORGE M ; SPRENKLE RICHARD ALLEN ; SINCLAIR FRANK ; TODOROV STANISLAV S ; CHANG SHENGWU ; TIMBERLAKE DAVID ROGER ; HUSSEY NORMAN E ; DECKER LUCKE KURT T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20160003258A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>GAMMA RAY OR X-RAY MICROSCOPES</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>IRRADIATION DEVICES</topic><topic>METALLURGY</topic><topic>NUCLEAR ENGINEERING</topic><topic>NUCLEAR PHYSICS</topic><topic>PHYSICS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</topic><toplevel>online_resources</toplevel><creatorcontrib>OLSON JOSEPH C</creatorcontrib><creatorcontrib>GAMMEL GEORGE M</creatorcontrib><creatorcontrib>SPRENKLE RICHARD ALLEN</creatorcontrib><creatorcontrib>SINCLAIR FRANK</creatorcontrib><creatorcontrib>TODOROV STANISLAV S</creatorcontrib><creatorcontrib>CHANG SHENGWU</creatorcontrib><creatorcontrib>TIMBERLAKE DAVID ROGER</creatorcontrib><creatorcontrib>HUSSEY NORMAN E</creatorcontrib><creatorcontrib>DECKER LUCKE KURT T</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OLSON JOSEPH C</au><au>GAMMEL GEORGE M</au><au>SPRENKLE RICHARD ALLEN</au><au>SINCLAIR FRANK</au><au>TODOROV STANISLAV S</au><au>CHANG SHENGWU</au><au>TIMBERLAKE DAVID ROGER</au><au>HUSSEY NORMAN E</au><au>DECKER LUCKE KURT T</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS AND TECHNIQUES FOR CONTROLLING ION IMPLANTATION UNIFORMITY</title><date>2016-01-08</date><risdate>2016</risdate><abstract>이온 주입기내 이온 빔을 제어하는 시스템은 제 1 주파수에서의 이온빔의 복수개의 빔 전류 측정들을 감지하는 검출기 시스템, 복수개의 빔 전류 측정들에 기초하여 이온 빔의 변화를 결정하는 분석 컴포넌트를 포함하고, 변화는 제 1 주파수와 다른 제 2 주파수에서의 이온 빔의 빔 전류 변화에 해당한다. 시스템은 또한 변화를 줄이기 위해서 분석 컴포넌트의 출력에 응답하여 이온 빔을 조정하는 조정 컴포넌트를 포함하되, 분석 컴포넌트 및 조정 컴포넌트는 이온 빔이 이온 주입기내에서 생성되는 동안 이온 빔의 변화를 임계값 아래로 동적으로 줄이도록 구성된다.
A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY GAMMA RAY OR X-RAY MICROSCOPES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL IRRADIATION DEVICES METALLURGY NUCLEAR ENGINEERING NUCLEAR PHYSICS PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR |
| title | APPARATUS AND TECHNIQUES FOR CONTROLLING ION IMPLANTATION UNIFORMITY |
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