DESIGN METHOD FOR HIGH FREQUENCY AMPLIFIER USING POWER GAIN-BOOSTING TECHNIQUE
The present invention relates to a method for designing a high frequency amplifier using a power gain-boosting technique and the high frequency amplifier using the same method. The method of the present invention can boost a maximum available gain up to 6 dB more than a maximum unilateral gain (U) o...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The present invention relates to a method for designing a high frequency amplifier using a power gain-boosting technique and the high frequency amplifier using the same method. The method of the present invention can boost a maximum available gain up to 6 dB more than a maximum unilateral gain (U) of a Mason, by obtaining the maximum unilateral gain of an amplification transistor, and designing a lossless reversible network where Y22/Y22 of a final equivalent Y parameter satisfies -[(2U-1)+2*square root(U(U-1))], and then embedding the amplification transistor in the lossless reversible network.
본 발명은 전력이득 증강 기법을 이용한 고주파 증폭기 설계방법 및 그 방법을 사용한 고주파 증폭기에 관한 것으로서, 증폭 트랜지스터의 최대일방이득(maximum unilateral gain: U)을 구하고, 최종 등가 Y 파라미터의 Y/Y가를 만족하는 무손실 가역 네트워크를 설계하여, 상기 증폭 트랜지스터를 상기 무손실 가역 네트워크에 내장(embedding)하여, 최대가용이득을 Mason의 최대일방이득보다 최대 6dB까지 전력이득을 증강시킬 수 있다. |
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