METHOD OF FABRICATING INDIUM ZINC OXIDE SPUTTERING TARGET

The present invention relates to a method for fabricating an indium zinc oxide (IZO) sputtering target and, more specifically, to a method for fabricating an IZO sputtering target, which can reduce the specific resistance of a sintered body made of IZO and the cracks in the IZO sintered body against...

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Bibliographische Detailangaben
Hauptverfasser:	PARK, HOON, PARK, HYUNG RYUL, KWON, SE HEE, LEE, EUN KYUNG, KIM, SUNG MIN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	The present invention relates to a method for fabricating an indium zinc oxide (IZO) sputtering target and, more specifically, to a method for fabricating an IZO sputtering target, which can reduce the specific resistance of a sintered body made of IZO and the cracks in the IZO sintered body against high power during sputtering. To achieve this, the method comprises: a step for forming a mixture of indium oxide powder and zinc oxide powder to make an IZO formed body; a step for sintering the IZO formed body into an IZO sintered body; and a step for bonding a backing plate onto the rear surface of the IZO sintered body. In the step for sintering, the IZO formed body is sintered under an oxygen-free atmosphere and controls the maximum temperature of sintering to be equal to or higher than 1400°C. 본 발명은 IZO 스퍼터링 타겟 제조방법에 관한 것으로서 더욱 상세하게는 IZO로 이루어진 소결체의 비저항을 감소시킬 수 있고, 이를 통해, 스퍼터링 시 높은 파워 하에서도 IZO 소결체의 크랙 발생 확률을 감소시킬 수 있는 IZO 스퍼터링 타겟 제조방법에 관한 것이다. 이를 위해, 본 발명은, 산화인듐 분말과 산화아연 분말의 혼합 분말을 성형하여 IZO 성형체로 만드는 성형단계; 상기 IZO 성형체를 소결하여 IZO 소결체로 만드는 소결단계; 및 상기 IZO 소결체의 후면에 백킹 플레이트를 본딩하는 본딩단계를 포함하되, 상기 소결단계에서는 무산소 분위기 하에서 상기 IZO 성형체에 대한 소결을 진행하고, 소결 최고 온도를 적어도 1400℃ 이상으로 제어하는 것을 특징으로 하는 IZO 스퍼터링 타겟 제조방법을 제공한다.