IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME

The embodiment of the present invention provides an image sensor capable of preventing a dark current due to charges generated on a surface of a substrate, and a method for manufacturing the same. The image sensor according to the embodiment of the present invention may include: a substrate includin...

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Bibliographische Detailangaben
Hauptverfasser:	WOO, DONG HYUN, KIM, JONG CHAE, CHOI, CHUNG SEOK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The embodiment of the present invention provides an image sensor capable of preventing a dark current due to charges generated on a surface of a substrate, and a method for manufacturing the same. The image sensor according to the embodiment of the present invention may include: a substrate including a photoelectric conversion region; a charge control layer which is overlapped on the photoelectric conversion region formed on the substrate; an interlayer insulating layer including a wire formed on the charge control layer; and a color filter and a photo detection pattern which are formed on the interlayer insulating layer to correspond to each photoelectric conversion region. The technology of the present invention has the effect of controlling charges remaining as a dark current source by forming the charge control layer on an upper part of the photoelectric conversion region. 본 실시예는 기판 표면에서 발생하는 전하에 의한 암전류를 방지할 수 있는 이미지 센서 및 그 제조 방법을 제공하기 위한 것으로, 본 실시예에 따른 이미지 센서는 광전변환영역을 포함하는 기판; 상기 기판 상에 형성된 상기 광전변환영역에 오버랩되는 전하제어층; 상기 전하제어층 상에 형성된 배선을 포함하는 층간절연층; 및 상기 층간절연층 상에 상기 각 광전변환영역에 대응되도록 형성된 컬러필터 및 집광패턴을 포함할 수 있다. 본 기술은 광전변환영역 상부에 전하제어층을 형성하여 암전류 소스(Dark Source)로 잔류하는 전하를 제어하는 효과가 있다.