METHOD OF RINSING AND DRYING OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
The present invention provides a method for cleaning and drying a semiconductor device, and a method for manufacturing a semiconductor using the same. The method for cleaning and drying forms a pattern on a substrate, cleans the substrate having the pattern using a cleaning solution, loads the subst...
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| creator | KIM, SEOK HOON OH, JUNG MIN JEONG, JI HOON LEE, KUN TACK LEE, HYO SAN MUN, CHANG SUP KIM, KWANG SU CHO, YONG JHIN KO, YONG SUN |
| description | The present invention provides a method for cleaning and drying a semiconductor device, and a method for manufacturing a semiconductor using the same. The method for cleaning and drying forms a pattern on a substrate, cleans the substrate having the pattern using a cleaning solution, loads the substrate having the pattern with the remained cleaning solution to a drying chamber, and inserts CO2 in a supercrital state to the drying chamber to dilute the concentration of the remained cleaning solution of 2 wt% or less.
반도체 소자의 세정 및 건조 방법 및 이를 이용하는 반도체 소자의 제조 방법을 제공한다. 세정 및 건조 방법은 기판 상에 패턴을 형성하고, 패턴이 형성된 기판을 세정액을 이용하여 세정하며, 세정액이 잔류하는 패턴이 형성된 기판을 건조 챔버 내에 로딩하고, 패턴이 형성된 기판에 잔류하는 세정액의 농도가 2중량%이하로 희석되도록 건조 챔버로 초임계 상태의 이산화탄소(CO)를 주입하는 것을 포함한다. |
| format | Patent |
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반도체 소자의 세정 및 건조 방법 및 이를 이용하는 반도체 소자의 제조 방법을 제공한다. 세정 및 건조 방법은 기판 상에 패턴을 형성하고, 패턴이 형성된 기판을 세정액을 이용하여 세정하며, 세정액이 잔류하는 패턴이 형성된 기판을 건조 챔버 내에 로딩하고, 패턴이 형성된 기판에 잔류하는 세정액의 농도가 2중량%이하로 희석되도록 건조 챔버로 초임계 상태의 이산화탄소(CO)를 주입하는 것을 포함한다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151015&DB=EPODOC&CC=KR&NR=20150116017A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151015&DB=EPODOC&CC=KR&NR=20150116017A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM, SEOK HOON</creatorcontrib><creatorcontrib>OH, JUNG MIN</creatorcontrib><creatorcontrib>JEONG, JI HOON</creatorcontrib><creatorcontrib>LEE, KUN TACK</creatorcontrib><creatorcontrib>LEE, HYO SAN</creatorcontrib><creatorcontrib>MUN, CHANG SUP</creatorcontrib><creatorcontrib>KIM, KWANG SU</creatorcontrib><creatorcontrib>CHO, YONG JHIN</creatorcontrib><creatorcontrib>KO, YONG SUN</creatorcontrib><title>METHOD OF RINSING AND DRYING OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME</title><description>The present invention provides a method for cleaning and drying a semiconductor device, and a method for manufacturing a semiconductor using the same. The method for cleaning and drying forms a pattern on a substrate, cleans the substrate having the pattern using a cleaning solution, loads the substrate having the pattern with the remained cleaning solution to a drying chamber, and inserts CO2 in a supercrital state to the drying chamber to dilute the concentration of the remained cleaning solution of 2 wt% or less.
반도체 소자의 세정 및 건조 방법 및 이를 이용하는 반도체 소자의 제조 방법을 제공한다. 세정 및 건조 방법은 기판 상에 패턴을 형성하고, 패턴이 형성된 기판을 세정액을 이용하여 세정하며, 세정액이 잔류하는 패턴이 형성된 기판을 건조 챔버 내에 로딩하고, 패턴이 형성된 기판에 잔류하는 세정액의 농도가 2중량%이하로 희석되도록 건조 챔버로 초임계 상태의 이산화탄소(CO)를 주입하는 것을 포함한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZCjxdQ3x8HdR8HdTCPL0C_b0c1dw9HNRcAmKBDGBosGuvp7O_n4uoc4h_kEKLq5hns6uYCUIjb6OfqFujs4hoUEgPVg1hIJNDvFwVQh29HXlYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBoamBoaGZgaG5o7GxKkCAGy0OXQ</recordid><startdate>20151015</startdate><enddate>20151015</enddate><creator>KIM, SEOK HOON</creator><creator>OH, JUNG MIN</creator><creator>JEONG, JI HOON</creator><creator>LEE, KUN TACK</creator><creator>LEE, HYO SAN</creator><creator>MUN, CHANG SUP</creator><creator>KIM, KWANG SU</creator><creator>CHO, YONG JHIN</creator><creator>KO, YONG SUN</creator><scope>EVB</scope></search><sort><creationdate>20151015</creationdate><title>METHOD OF RINSING AND DRYING OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME</title><author>KIM, SEOK HOON ; OH, JUNG MIN ; JEONG, JI HOON ; LEE, KUN TACK ; LEE, HYO SAN ; MUN, CHANG SUP ; KIM, KWANG SU ; CHO, YONG JHIN ; KO, YONG SUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20150116017A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM, SEOK HOON</creatorcontrib><creatorcontrib>OH, JUNG MIN</creatorcontrib><creatorcontrib>JEONG, JI HOON</creatorcontrib><creatorcontrib>LEE, KUN TACK</creatorcontrib><creatorcontrib>LEE, HYO SAN</creatorcontrib><creatorcontrib>MUN, CHANG SUP</creatorcontrib><creatorcontrib>KIM, KWANG SU</creatorcontrib><creatorcontrib>CHO, YONG JHIN</creatorcontrib><creatorcontrib>KO, YONG SUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM, SEOK HOON</au><au>OH, JUNG MIN</au><au>JEONG, JI HOON</au><au>LEE, KUN TACK</au><au>LEE, HYO SAN</au><au>MUN, CHANG SUP</au><au>KIM, KWANG SU</au><au>CHO, YONG JHIN</au><au>KO, YONG SUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF RINSING AND DRYING OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME</title><date>2015-10-15</date><risdate>2015</risdate><abstract>The present invention provides a method for cleaning and drying a semiconductor device, and a method for manufacturing a semiconductor using the same. The method for cleaning and drying forms a pattern on a substrate, cleans the substrate having the pattern using a cleaning solution, loads the substrate having the pattern with the remained cleaning solution to a drying chamber, and inserts CO2 in a supercrital state to the drying chamber to dilute the concentration of the remained cleaning solution of 2 wt% or less.
반도체 소자의 세정 및 건조 방법 및 이를 이용하는 반도체 소자의 제조 방법을 제공한다. 세정 및 건조 방법은 기판 상에 패턴을 형성하고, 패턴이 형성된 기판을 세정액을 이용하여 세정하며, 세정액이 잔류하는 패턴이 형성된 기판을 건조 챔버 내에 로딩하고, 패턴이 형성된 기판에 잔류하는 세정액의 농도가 2중량%이하로 희석되도록 건조 챔버로 초임계 상태의 이산화탄소(CO)를 주입하는 것을 포함한다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD OF RINSING AND DRYING OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME |
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