METHOD OF RINSING AND DRYING OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

The present invention provides a method for cleaning and drying a semiconductor device, and a method for manufacturing a semiconductor using the same. The method for cleaning and drying forms a pattern on a substrate, cleans the substrate having the pattern using a cleaning solution, loads the subst...

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Bibliographische Detailangaben
Hauptverfasser:	KIM, SEOK HOON, OH, JUNG MIN, JEONG, JI HOON, LEE, KUN TACK, LEE, HYO SAN, MUN, CHANG SUP, KIM, KWANG SU, CHO, YONG JHIN, KO, YONG SUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention provides a method for cleaning and drying a semiconductor device, and a method for manufacturing a semiconductor using the same. The method for cleaning and drying forms a pattern on a substrate, cleans the substrate having the pattern using a cleaning solution, loads the substrate having the pattern with the remained cleaning solution to a drying chamber, and inserts CO2 in a supercrital state to the drying chamber to dilute the concentration of the remained cleaning solution of 2 wt% or less. 반도체 소자의 세정 및 건조 방법 및 이를 이용하는 반도체 소자의 제조 방법을 제공한다. 세정 및 건조 방법은 기판 상에 패턴을 형성하고, 패턴이 형성된 기판을 세정액을 이용하여 세정하며, 세정액이 잔류하는 패턴이 형성된 기판을 건조 챔버 내에 로딩하고, 패턴이 형성된 기판에 잔류하는 세정액의 농도가 2중량%이하로 희석되도록 건조 챔버로 초임계 상태의 이산화탄소(CO)를 주입하는 것을 포함한다.