PRECURSOR COMPOUNDS AND THIN FILM DEPOSITION METHOD USING THE PRECUSOR COMPOUMDS

PRECURSOR COMPOUNDS AND THIN FILM DEPOSITION METHOD USING THE PRECUSOR COMPOUMDS

According to an embodiment of the present invention, a precursor compound is represented by chemical formula 1, and R^1 is any one of a halide group, hydrogen, an alkyl group, a cyclic alkyl group, a phenyl group, or silyl group. The alkyl group has 1 to 4 carbon atoms, and the cyclic alkyl group ha...

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Bibliographische Detailangaben
Hauptverfasser: PARK, SEONG JIN, GWON, HYUK LYONG, KIM, KI HO, LEE, KANG WOOK, CHOI, HO MIN, JUNG, WOO DUCK, OH, WAN SUK, SHIN, SEUNG WOO, CHO, SUNG KIL, LEE, KOON WOO
Format: Patent
Sprache:eng ; kor
Schlagworte:
ACYCLIC OR CARBOCYCLIC COMPOUNDS
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
ORGANIC CHEMISTRY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:According to an embodiment of the present invention, a precursor compound is represented by chemical formula 1, and R^1 is any one of a halide group, hydrogen, an alkyl group, a cyclic alkyl group, a phenyl group, or silyl group. The alkyl group has 1 to 4 carbon atoms, and the cyclic alkyl group has 4 to 7 carbon atoms.