APPARATUS FOR PROCESSING SUBSTRATE WITH HEATER ADJUSTING PROCESS SPACE TEMPERATURE ACCORDING TO HEIGHT

According to an embodiment of the present invention, a substrate processing apparatus to perform a process on the substrate, includes: a lower chamber which has an opened upper part and a path for inputting/outputting the substrate on a side; an external reaction tube which closes the opened upper p...

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Hauptverfasser: KIM, YONG KI, SONG, BYOUNG GYU, HYON, JUN JIN, SHIN, YANG SIK, KIM, CHANG DOL, KIM, KYONG HUN
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creator KIM, YONG KI
SONG, BYOUNG GYU
HYON, JUN JIN
SHIN, YANG SIK
KIM, CHANG DOL
KIM, KYONG HUN
description According to an embodiment of the present invention, a substrate processing apparatus to perform a process on the substrate, includes: a lower chamber which has an opened upper part and a path for inputting/outputting the substrate on a side; an external reaction tube which closes the opened upper part of the lower chamber, and provides a process space for the process; a substrate holder which vertically loads at least one substrate, and can be moved from a loading position for loading the substrate in the substrate holder to a process position for performing the process on the substrate; and a gas supply unit which is installed in the external reaction tube, supplies reaction gas to the process space, and forms the flow of the reaction gas with different phase difference in a vertical direction.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20150108661A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20150108661A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20150108661A3</originalsourceid><addsrcrecordid>eNqNjLEKwkAQRNNYiPoPC9bCRTHYrpdNLoresbvBMgS5VKKB-P-YQD7Aagbem1kmHYaAjFoLFJ4hsLckUt1LkPosOhKCR6UOHI2VAfNLLTrxWQUJaAmUboGmHyZAaz3nk6N-3FWl03Wy6NrXEDdzrpJtQWrdLvafJg59-4zv-G2uvDfp0aTmlGUpHv6zftJsNlQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>APPARATUS FOR PROCESSING SUBSTRATE WITH HEATER ADJUSTING PROCESS SPACE TEMPERATURE ACCORDING TO HEIGHT</title><source>esp@cenet</source><creator>KIM, YONG KI ; SONG, BYOUNG GYU ; HYON, JUN JIN ; SHIN, YANG SIK ; KIM, CHANG DOL ; KIM, KYONG HUN</creator><creatorcontrib>KIM, YONG KI ; SONG, BYOUNG GYU ; HYON, JUN JIN ; SHIN, YANG SIK ; KIM, CHANG DOL ; KIM, KYONG HUN</creatorcontrib><description>According to an embodiment of the present invention, a substrate processing apparatus to perform a process on the substrate, includes: a lower chamber which has an opened upper part and a path for inputting/outputting the substrate on a side; an external reaction tube which closes the opened upper part of the lower chamber, and provides a process space for the process; a substrate holder which vertically loads at least one substrate, and can be moved from a loading position for loading the substrate in the substrate holder to a process position for performing the process on the substrate; and a gas supply unit which is installed in the external reaction tube, supplies reaction gas to the process space, and forms the flow of the reaction gas with different phase difference in a vertical direction.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150930&amp;DB=EPODOC&amp;CC=KR&amp;NR=20150108661A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150930&amp;DB=EPODOC&amp;CC=KR&amp;NR=20150108661A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM, YONG KI</creatorcontrib><creatorcontrib>SONG, BYOUNG GYU</creatorcontrib><creatorcontrib>HYON, JUN JIN</creatorcontrib><creatorcontrib>SHIN, YANG SIK</creatorcontrib><creatorcontrib>KIM, CHANG DOL</creatorcontrib><creatorcontrib>KIM, KYONG HUN</creatorcontrib><title>APPARATUS FOR PROCESSING SUBSTRATE WITH HEATER ADJUSTING PROCESS SPACE TEMPERATURE ACCORDING TO HEIGHT</title><description>According to an embodiment of the present invention, a substrate processing apparatus to perform a process on the substrate, includes: a lower chamber which has an opened upper part and a path for inputting/outputting the substrate on a side; an external reaction tube which closes the opened upper part of the lower chamber, and provides a process space for the process; a substrate holder which vertically loads at least one substrate, and can be moved from a loading position for loading the substrate in the substrate holder to a process position for performing the process on the substrate; and a gas supply unit which is installed in the external reaction tube, supplies reaction gas to the process space, and forms the flow of the reaction gas with different phase difference in a vertical direction.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwkAQRNNYiPoPC9bCRTHYrpdNLoresbvBMgS5VKKB-P-YQD7Aagbem1kmHYaAjFoLFJ4hsLckUt1LkPosOhKCR6UOHI2VAfNLLTrxWQUJaAmUboGmHyZAaz3nk6N-3FWl03Wy6NrXEDdzrpJtQWrdLvafJg59-4zv-G2uvDfp0aTmlGUpHv6zftJsNlQ</recordid><startdate>20150930</startdate><enddate>20150930</enddate><creator>KIM, YONG KI</creator><creator>SONG, BYOUNG GYU</creator><creator>HYON, JUN JIN</creator><creator>SHIN, YANG SIK</creator><creator>KIM, CHANG DOL</creator><creator>KIM, KYONG HUN</creator><scope>EVB</scope></search><sort><creationdate>20150930</creationdate><title>APPARATUS FOR PROCESSING SUBSTRATE WITH HEATER ADJUSTING PROCESS SPACE TEMPERATURE ACCORDING TO HEIGHT</title><author>KIM, YONG KI ; SONG, BYOUNG GYU ; HYON, JUN JIN ; SHIN, YANG SIK ; KIM, CHANG DOL ; KIM, KYONG HUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20150108661A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM, YONG KI</creatorcontrib><creatorcontrib>SONG, BYOUNG GYU</creatorcontrib><creatorcontrib>HYON, JUN JIN</creatorcontrib><creatorcontrib>SHIN, YANG SIK</creatorcontrib><creatorcontrib>KIM, CHANG DOL</creatorcontrib><creatorcontrib>KIM, KYONG HUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM, YONG KI</au><au>SONG, BYOUNG GYU</au><au>HYON, JUN JIN</au><au>SHIN, YANG SIK</au><au>KIM, CHANG DOL</au><au>KIM, KYONG HUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS FOR PROCESSING SUBSTRATE WITH HEATER ADJUSTING PROCESS SPACE TEMPERATURE ACCORDING TO HEIGHT</title><date>2015-09-30</date><risdate>2015</risdate><abstract>According to an embodiment of the present invention, a substrate processing apparatus to perform a process on the substrate, includes: a lower chamber which has an opened upper part and a path for inputting/outputting the substrate on a side; an external reaction tube which closes the opened upper part of the lower chamber, and provides a process space for the process; a substrate holder which vertically loads at least one substrate, and can be moved from a loading position for loading the substrate in the substrate holder to a process position for performing the process on the substrate; and a gas supply unit which is installed in the external reaction tube, supplies reaction gas to the process space, and forms the flow of the reaction gas with different phase difference in a vertical direction.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title APPARATUS FOR PROCESSING SUBSTRATE WITH HEATER ADJUSTING PROCESS SPACE TEMPERATURE ACCORDING TO HEIGHT
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T05%3A34%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KIM,%20YONG%20KI&rft.date=2015-09-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20150108661A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true