METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

The present specification relates to a method for manufacturing a thin film transistor, capable of preventing damage to a back channel part of an active layer, wherein the method according to an embodiment of the present invention comprises: forming a source and a drain electrode after successively coating a dual protective layer on an active layer without directly depositing the source and the drain electrode on the active layer of the thin film transistor. The method for manufacturing the thin film transistor comprises steps of: accumulating a gate electrode and an insulation layer on a glass substrate; forming an active layer on a first part of the insulation layer; forming a first protective layer on the insulation layer and the active layer; forming a second protective layer on the first protective layer; forming a via hole on the first and the second protective layer to expose a second part of the insulation layer and a part of the activation layer; depositing a metal layer on the via hole and the second protective layer; and removing the metal layer deposited on the second protective layer and the first and the second protective layer in which the metal layer deposited at the via hole is excluded. 본 명세서는 액티브층의 백 채널 부분의 손상을 방지할 수 있는 박막 트랜지스터 제조 방법에 관한 것으로서, 본 발명의 실시예에 따른 박막 트랜지스터 제조 방법은 박막 트랜지스터의 액티브층 상에 소스 및 드레인 전극을 바로 증착하지 않고, 2중 보호층을 액티브 층 상에 순차적으로 코팅한 후 소스 및 드레인 전극을 형성할 수 있다.