METHODS OF FORMING PATTERNS

Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first m...

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Bibliographische Detailangaben
Hauptverfasser: OLSON ADAM, MIRIN NIK, BROWN WILLIAM R, JAIN KAVERI, MILLWARD DAN, TREFONAS PETER III, HUSTAD PHILLIP DENE, EOM, HO SEOP, LEE CHRISTOPHER NAM, PARK, JONG KEUN, CHEN XUE GLORIA
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material. 몇몇 실시형태는 패턴을 형성하는 방법을 포함한다. 제1 마스크는 재료 위에 형성된다. 제1 마스크는 내부에 연장되는 피처를 갖고 제1 패턴을 획정한다. 제1 패턴은 피처의 분포에 걸쳐 제1 수준의 균일성을 갖는다. 브러시 층은 제1 마스크에 걸쳐 피처 내에 형성되어 피처를 협소화시켜 제1 마스크로부터 제2 마스크를 작성한다. 제2 마스크는 협소화된 피처에 걸쳐 제1 수준의 균일성보다 큰 제2 수준의 균일성을 갖는다. 패턴은 제2 마스크를 통해 상기 재료로 전사된다.