METHOD OF PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME

A method for processing a substrate according to the present invention comprises the steps of: generating first plasma from first reaction gas; generating second plasma from second reaction gas; and separately supplying the first plasma and the second plasma to a substrate. Therefore, the substrate...

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Bibliographische Detailangaben
Hauptverfasser:	SAM HYUNG SAM KIM, JEON, SANG JEAN, KIM, GON JUN, VOLYNETS VLADIMIR, LEE, SANG HEON, SONG, IN CHEOL, PARK, YONG KYUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for processing a substrate according to the present invention comprises the steps of: generating first plasma from first reaction gas; generating second plasma from second reaction gas; and separately supplying the first plasma and the second plasma to a substrate. Therefore, the substrate is processed using two or more kinds of plasma generated under different process conditions optimized for allowing each of two or more remote plasma sources to process a substrate, thereby having a desired shape. 기판 처리 방법에 따르면, 제 1 반응 가스로부터 제 1 플라즈마를 생성한다. 제 2 반응 가스로부터 제 2 플라즈마를 생성한다. 상기 제 1 플라즈마와 상기 제 2 플라즈마를 기판으로 개별적으로 제공한다. 따라서, 적어도 2개의 리모트 플라즈마 소스들 각각이 기판을 처리하는데 최적화된 서로 다른 공정 조건들 하에서 발생된 적어도 2개의 플라즈마들을 이용해서 처리된 기판은 원하는 형상을 갖게 될 수 있다.