ETCHING COMPOSITION FOR SILICON OXIDE LAYER

A silicon oxide film etching solution of the present invention, which comprises a metal film corrosion inhibitor having at least one thiol group, can selectively etch a silicon oxide film without damage to a metal film during etching treatment of the silicon oxide film comprising at least one metal...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MUN, JAE WOONG, JEONG, TAE SU, LEE, MYUNG HO, JEON, KYEONG MIN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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