SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

The present technique relates to a semiconductor device capable of increasing breakdown voltage. The semiconductor device includes epilayers stacked on a support substrate; a first burying impurity region which shares the support substrate with a lowermost epilayer among the epilayers; at least one...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, KUEM JU, KO, KWANG SIK, PARK, JOO WOON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	The present technique relates to a semiconductor device capable of increasing breakdown voltage. The semiconductor device includes epilayers stacked on a support substrate; a first burying impurity region which shares the support substrate with a lowermost epilayer among the epilayers; at least one second burying impurity region which is connected to the first burying impurity region and shares an N+1^th epilayer with a N^th epilayer among the epilayers; a body region which is formed in the uppermost layer among the epilayers; and a deep well which is formed in the uppermost epilayer, surrounds the body region, and is connected to the second burying impurity region which shares the uppermost epilayer.