STRUCTURE OF A SLOW-WAVE MICROSTRIP LINE WITH HIGH Q FACTOR AND A SHORTER WAVELENGTH

The present invention relates to a structure of a slow-wave microstrip line. It include a substrate and a ground surface formed in the upper part of the substrate, a dielectric formed in the upper part of the ground surface, and a signal line which has a preset linewidth in the upper part of the die...

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Bibliographische Detailangaben
Hauptverfasser: LEE, SANG GUG, LAM HUU BAO, KIM, SUN A, HAN, SEOK KYUN
Format: Patent
Sprache:eng ; kor
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Beschreibung
Zusammenfassung:The present invention relates to a structure of a slow-wave microstrip line. It include a substrate and a ground surface formed in the upper part of the substrate, a dielectric formed in the upper part of the ground surface, and a signal line which has a preset linewidth in the upper part of the dielectric and transfers an electromagnetic wave. The lower ground surface metal layer of the signal line includes periodical slots where a metal layer is removed in a direction vertical to a signal progressing direction and bars which are higher than the ground surface. A Q factor is improved by forming a shorter wavelength compared to the wavelength of an inputted signal.