MASK FOR EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS

Provided is a mask for an extreme ultraviolet lithography process. The mask includes a reflection layer which includes a first material layer and a second material layer which are repeatedly and alternately stacked on a substrate and a second material layer, a phase modulation pattern which is arran...

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Bibliographische Detailangaben
Hauptverfasser:	AHN, JIN HO, JEONG, SEE JUN, HONG, SEONG CHUL, LEE, JAE UK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Provided is a mask for an extreme ultraviolet lithography process. The mask includes a reflection layer which includes a first material layer and a second material layer which are repeatedly and alternately stacked on a substrate and a second material layer, a phase modulation pattern which is arranged on the reflection layer, and an absorption layer which is arranged on the phase modulation pattern and includes a platinum group compound.