CRYSTALLIZATION METHOD OF POLYCRYSTALLINE FOR AMORPHOUS SILICON THIN FILM

In a crystallization method of polycrystalline for an amorphous silicon thin film by emitting a laser beam to the amorphous silicon thin film, a laser source capable of emitting a pulse laser to an prepared amorphous silicon thin film and a He-Ne laser source capable of emitting a He-Ne laser beam capable of measuring a TRR signal are prepared. Detection parts capable of obtaining a reflected beam from two laser sources respectively are formed to obtain the TRF signal (molten value) of a silicon thin film according to fluence through laser irradiation. The laser of the pulse laser source is emitted two shots with a preset interval. A condition parameter of the laser for two-shot irradiation emits a second pulse laser at a point where a TRR signal is reduced after the TRR signal corresponding to the molten value of the silicon thin film according to one shot irradiation increases. Accordingly, the crystallization structure of an amorphous silicon can be crystallized into polysilicon.