PHOTODETECTOR AND MANUFACTURING METHOD THEREOF

The present invention relates to a photodetector capable of miniaturization and mass production and receiving light of a wavelength of 800-900 nm, and to a manufacturing method thereof. The present invention includes a first conductivity type semiconductor layer made of a semiconductor material havi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KANG, KYUNG MIN, GOH, SUNG MIN, JO, SE JIN, CHOI, BONG MIN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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