PHOTODETECTOR AND MANUFACTURING METHOD THEREOF

The present invention relates to a photodetector capable of miniaturization and mass production and receiving light of a wavelength of 800-900 nm, and to a manufacturing method thereof. The present invention includes a first conductivity type semiconductor layer made of a semiconductor material having first conductivity type; a second conductivity type semiconductor layer which is bonded to the first conductivity type semiconductor layer to form pn junction and is made of a semiconductor material having second conductivity type semiconductor layer; a band pass filter layer which is formed by stacking a dielectric layer of TiO_2/SiO_2 for reflecting a wavelength of more than 900 nm and a wavelength of less than 800 nm on the second conductivity type semiconductor layer.