TRANSISTOR FOR REFORMING DIELECTRIC FILM SURFACE AND THE PRODUCT METHOD THEREOF

Disclosed are a transistor for reforming the surface of a dielectric film and a manufacturing method thereof. The present invention improves the performance of the transistor through the reformation of the surface of the dielectric film by comprising the transistor for reforming the surface of the dielectric film by including a gate electrode which is formed on a substrate, a dielectric layer which is printed to cover the gate electrode on the substrate, a self-assembled monolayer (SAM) which is composed of surface reforming agents printed by continuously using an R2R gravure process on the upper side of the printed dielectric film, a single-wall (SWNT) which is composed of a carbon nanotube printed on the upper side of the SAM, and source and drain electrodes which are separately printed on the active layer.