SEMICONDUCTOR DEVICE AND MANUFACTRUING METHOD THEREOF

The present invention relates to a semiconductor device and a manufacturing method thereof. In the semiconductor device according to the present invention, a hollow region is formed in the center of a channel region formed in a well region of a substrate. A source/drain LDD region is formed on the r...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	PANG, YON SUP
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present invention relates to a semiconductor device and a manufacturing method thereof. In the semiconductor device according to the present invention, a hollow region is formed in the center of a channel region formed in a well region of a substrate. A source/drain LDD region is formed on the right and left sides of the hollow region. The hollow region is formed to be shorter than the length of a channel and is separated from the edge of the source/drain LDD region with a preset interval. The separation distance is identical. According to the present invention, a short channel effect is suppressed. Device performance (I_Dsat) is maintained and the reliability of a hot carrier is improved. Also, the hollow region is accurately formed according to the change of the sequence of a manufacturing process to form the hollow region after the well region is formed.