MANUFACTURING METHOD FOR DISILANE, TRISILANE, TETRASILANE USING DIELECTRIC BARRIER DISCHARGE

The present invention relates to a method for preparing disilane, trisilane, and tetrasilane gas through dielectric barrier discharge (DBD) from silane gas. More specifically, the present invention relates to a method for preparing disilane, trisilane, and tetrasilane gas from silane gas through dielectric barrier discharge, in which disilane can be obtained from silane through a continuous process by using an dielectric barrier discharge reactor, and it is possible to achieve 50-85% of continuous yield depending on a reaction condition and to use a broad range of reaction conditions such as reaction pressure and reaction temperature by installing an electrode surrounded by an insulator inside of the reactor, mixing hydrogen with helium or nitrogen inert gas as raw gas, and simultaneously injecting the mixture with silane gas in a predetermined range.