A METHOD OF FORMING A METAL PATTERNS

The present invention relates to a method of forming a metal pattern, and more particularly, to a method of forming a metal pattern, in which an etching process for etching a metal layer and a photo-resist (PR) removing process in a photo-lithography process of a semiconductor are omitted. According...

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Bibliographische Detailangaben
Hauptverfasser:	AHN, BYUNG WOOK, SUNG, MIN HO, LEE, SEONG EUI, RYU, SI HONG, YOON, YOUNG WOO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a method of forming a metal pattern, and more particularly, to a method of forming a metal pattern, in which an etching process for etching a metal layer and a photo-resist (PR) removing process in a photo-lithography process of a semiconductor are omitted. According to an embodiment of the present invention, by omitting the etching process for etching the metal layer and the photo-resist (PR) removing process in the photo-lithography process of the semiconductor, discharging of an environmentally harmful material accompanied with the etching process is suppressed so an eco-friendly metal forming process can be implemented and can be advantageous in mass production through simplifying a process procedure. In addition, by utilizing the photo-resist pattern structure as an insulating material of the metal pattern without separately removing the photo-resist pattern structure, a pattern having excellent insulation properties between metals can be formed by a convenient scheme.