POST-CMP FORMULATION HAVING IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE

POST-CMP FORMULATION HAVING IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MEDD STEVEN, JENQ SHRANE NING, LIU JUN, SUN LAISHENG, HURD TRACE QUENTIN
Format: Patent
Sprache:eng ; kor
Schlagworte:
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium.