METHOD AND APPARATUS FOR REAL-TIME MEASURING DEPOSITION THICKNESS AND UNIFORMITY DURING DEPOSITION PROCESS

The present invention relates to a method and an apparatus for measuring thickness of a deposited film. The apparatus measures the thickness of the deposited film by measuring intensity of plasma light emission generated during a plasma deposition process. The intensity of the plasma light is measur...

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Bibliographische Detailangaben
Hauptverfasser:	YUN, MYOUNG SOO, JO, TAE HOON, WOO, WON KYUN, CHA, SUNG DUK, KWON, GI GHUNG, SEO, IL WON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS METALLURGY PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING
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Beschreibung
Zusammenfassung:	The present invention relates to a method and an apparatus for measuring thickness of a deposited film. The apparatus measures the thickness of the deposited film by measuring intensity of plasma light emission generated during a plasma deposition process. The intensity of the plasma light is measured after the plasma light, generated during the deposition process, penetrates the film deposited on a substrate and a portion of the substrate. The apparatus calculates the thickness of the deposited film based on the intensity of the plasma light. Unlike the prior apparatus for measuring thickness of a deposited film, the apparatus of the present invention measures thickness of multiple spots of the deposited film at the same time and in real time during a deposition process. Therefore, uniformity of the deposited film can be monitored in real time.