METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

Provided is a method for manufacturing a semiconductor device which reduces a patterning process when a landing pad is formed. The method for manufacturing a semiconductor device includes forming a gate line extended in a first direction and an impurity region in the side of the gate line in a substrate, forming an insulating layer pattern which is extended in the first direction on the substrate and includes a first through hole to expose the impurity region, forming a conductive line contact which fills the first through hole and is electrically connected to the impurity region, forming a first mask pattern including a first opening part extended in a second direction different from the first direction on the conductive line contact and the insulating pattern, and etching a conducive line contact exposed by the first opening part by using the first mask pattern.