3-LEVEL POWER CONVERTER HALF-BRIDGE

The present invention relates to a 3-level power converter half-bridge comprising a first substrate (2) and a second substrate (3). The second substrate is arranged separately from the first substrate (2). During a desirable operation of the 3-level power converter half-bridge (1) having a high powe...

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1. Verfasser: STAUDT INGO
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:The present invention relates to a 3-level power converter half-bridge comprising a first substrate (2) and a second substrate (3). The second substrate is arranged separately from the first substrate (2). During a desirable operation of the 3-level power converter half-bridge (1) having a high power factor, power semiconductor switches (T1, T2, T3, T4) and diodes (D1, D2, D3, D4) of the 3-level power converter half-bridge (1) are divided into the first substrate (2) and the second substrate (3) in such a manner that a current does not switch or rarely switches between the power semiconductor switches (T1, T2) and the diodes (D1, D3) arranged on the first substrate (2) and the power semiconductor switches (T3, T4) and the diodes (D2, D4) arranged on the second substrate (3). The present invention provides the 3-level converter half-bridge (1) having a reduced switching overvoltage.