METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Provided is a method for fabricating a semiconductor device which improves a metallization process for forming an upper line by removing a metal hard mask used for a process for forming the upper line before a lower line is opened. The method for fabricating a semiconductor device includes forming a...

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Hauptverfasser: KO, DONG WHAN, SON, SAE IL, SHIN, HONG JAE, KIM, JONG SAM, BOK, SEUNG IL, JANG, WOO JIN
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KO, DONG WHAN
SON, SAE IL
SHIN, HONG JAE
KIM, JONG SAM
BOK, SEUNG IL
JANG, WOO JIN
description Provided is a method for fabricating a semiconductor device which improves a metallization process for forming an upper line by removing a metal hard mask used for a process for forming the upper line before a lower line is opened. The method for fabricating a semiconductor device includes forming an etch stop layer and an insulating layer successively on a substrate having a lower pattern, forming a conducive mask pattern including a first opening part on the insulating layer, forming a via hole which exposes the etch step layer in the insulating layer by using the conductive mask pattern as an etch mask, and forming a passivation layer along the sidewall of the via hole after the conductive mask pattern is removed.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20140122583A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20140122583A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20140122583A3</originalsourceid><addsrcrecordid>eNrjZND2dQ3x8HdRcPMPUnBzdArydHYM8fRzVwh29fV09vdzCXUOAcq4uIZ5OrvyMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JJ47yAjA0MTA0MjI1MLY0dj4lQBAAF3Jbc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR FABRICATING SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>KO, DONG WHAN ; SON, SAE IL ; SHIN, HONG JAE ; KIM, JONG SAM ; BOK, SEUNG IL ; JANG, WOO JIN</creator><creatorcontrib>KO, DONG WHAN ; SON, SAE IL ; SHIN, HONG JAE ; KIM, JONG SAM ; BOK, SEUNG IL ; JANG, WOO JIN</creatorcontrib><description>Provided is a method for fabricating a semiconductor device which improves a metallization process for forming an upper line by removing a metal hard mask used for a process for forming the upper line before a lower line is opened. The method for fabricating a semiconductor device includes forming an etch stop layer and an insulating layer successively on a substrate having a lower pattern, forming a conducive mask pattern including a first opening part on the insulating layer, forming a via hole which exposes the etch step layer in the insulating layer by using the conductive mask pattern as an etch mask, and forming a passivation layer along the sidewall of the via hole after the conductive mask pattern is removed.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20141020&amp;DB=EPODOC&amp;CC=KR&amp;NR=20140122583A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20141020&amp;DB=EPODOC&amp;CC=KR&amp;NR=20140122583A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KO, DONG WHAN</creatorcontrib><creatorcontrib>SON, SAE IL</creatorcontrib><creatorcontrib>SHIN, HONG JAE</creatorcontrib><creatorcontrib>KIM, JONG SAM</creatorcontrib><creatorcontrib>BOK, SEUNG IL</creatorcontrib><creatorcontrib>JANG, WOO JIN</creatorcontrib><title>METHOD FOR FABRICATING SEMICONDUCTOR DEVICE</title><description>Provided is a method for fabricating a semiconductor device which improves a metallization process for forming an upper line by removing a metal hard mask used for a process for forming the upper line before a lower line is opened. The method for fabricating a semiconductor device includes forming an etch stop layer and an insulating layer successively on a substrate having a lower pattern, forming a conducive mask pattern including a first opening part on the insulating layer, forming a via hole which exposes the etch step layer in the insulating layer by using the conductive mask pattern as an etch mask, and forming a passivation layer along the sidewall of the via hole after the conductive mask pattern is removed.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND2dQ3x8HdRcPMPUnBzdArydHYM8fRzVwh29fV09vdzCXUOAcq4uIZ5OrvyMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JJ47yAjA0MTA0MjI1MLY0dj4lQBAAF3Jbc</recordid><startdate>20141020</startdate><enddate>20141020</enddate><creator>KO, DONG WHAN</creator><creator>SON, SAE IL</creator><creator>SHIN, HONG JAE</creator><creator>KIM, JONG SAM</creator><creator>BOK, SEUNG IL</creator><creator>JANG, WOO JIN</creator><scope>EVB</scope></search><sort><creationdate>20141020</creationdate><title>METHOD FOR FABRICATING SEMICONDUCTOR DEVICE</title><author>KO, DONG WHAN ; SON, SAE IL ; SHIN, HONG JAE ; KIM, JONG SAM ; BOK, SEUNG IL ; JANG, WOO JIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20140122583A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KO, DONG WHAN</creatorcontrib><creatorcontrib>SON, SAE IL</creatorcontrib><creatorcontrib>SHIN, HONG JAE</creatorcontrib><creatorcontrib>KIM, JONG SAM</creatorcontrib><creatorcontrib>BOK, SEUNG IL</creatorcontrib><creatorcontrib>JANG, WOO JIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KO, DONG WHAN</au><au>SON, SAE IL</au><au>SHIN, HONG JAE</au><au>KIM, JONG SAM</au><au>BOK, SEUNG IL</au><au>JANG, WOO JIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR FABRICATING SEMICONDUCTOR DEVICE</title><date>2014-10-20</date><risdate>2014</risdate><abstract>Provided is a method for fabricating a semiconductor device which improves a metallization process for forming an upper line by removing a metal hard mask used for a process for forming the upper line before a lower line is opened. The method for fabricating a semiconductor device includes forming an etch stop layer and an insulating layer successively on a substrate having a lower pattern, forming a conducive mask pattern including a first opening part on the insulating layer, forming a via hole which exposes the etch step layer in the insulating layer by using the conductive mask pattern as an etch mask, and forming a passivation layer along the sidewall of the via hole after the conductive mask pattern is removed.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T14%3A01%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KO,%20DONG%20WHAN&rft.date=2014-10-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20140122583A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true