METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Provided is a method for fabricating a semiconductor device which improves a metallization process for forming an upper line by removing a metal hard mask used for a process for forming the upper line before a lower line is opened. The method for fabricating a semiconductor device includes forming an etch stop layer and an insulating layer successively on a substrate having a lower pattern, forming a conducive mask pattern including a first opening part on the insulating layer, forming a via hole which exposes the etch step layer in the insulating layer by using the conductive mask pattern as an etch mask, and forming a passivation layer along the sidewall of the via hole after the conductive mask pattern is removed.