METHOD OF MAKING PHOTOVOLTAIC DEVICES INCORPORATING IMPROVED PNICTIDE SEMICONDUCTOR FILMS USING METALLIZATION/ANNEALING/REMOVAL TECHNIQUES

The present invention provides methods of making photovoltaic devices incorporating improved pnictide semiconductor films. In particular, the principles of the present invention are used to improve the surface quality of pnictide films. Photovoltaic devices incorporating these films demonstrate impr...

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Bibliographische Detailangaben
Hauptverfasser:	LEWIS NATHAN S, BOSCO JEFFREY P, DEGROOT MARTY W, KIMBALL GREGORY M, KRISTINE LIGMAN FEIST REBEKAH, ATWATER HARRY A
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention provides methods of making photovoltaic devices incorporating improved pnictide semiconductor films. In particular, the principles of the present invention are used to improve the surface quality of pnictide films. Photovoltaic devices incorporating these films demonstrate improved electronic performance. As an overview, the present invention involves a methodology that metalizes the pnictide film, anneals the metalized film under conditions that tend to form an alloy between the pnictide film and the alloy, and then removes the excess metal and at least a portion of the alloy. In one mode of practice, the pnictide semiconductor is Zinc phosphide and the metal is Magnesium.