DENSE OXIDE COATED COMPONENT OF A PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF

DENSE OXIDE COATED COMPONENT OF A PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF

A method for forming a dense oxide on an aluminum component of semiconductor processing equipment includes a movement of cold-spraying a pure aluminum layer on the surface of the aluminum component to the predetermined thickness. In succession, a dense oxide coating is formed on the pure aluminum la...

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Bibliographische Detailangaben
Hauptverfasser: CHARLES WILLIAM, RAMANATHAN SIVAKAMI, KERNS JOHN MICHAEL, STEVENSON TOM, XU LIN, SHIH HONG, O'NEILL ROBERT G, DAUGHERTY JOHN, ORMOND RUSSELL
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method for forming a dense oxide on an aluminum component of semiconductor processing equipment includes a movement of cold-spraying a pure aluminum layer on the surface of the aluminum component to the predetermined thickness. In succession, a dense oxide coating is formed on the pure aluminum layer using a plasma electrolytic oxidation process which makes the pure aluminum layer experience microplasmic discharges, and accordingly the dense oxide coating is formed on the pure aluminum layer of the aluminum component.