METHOD AND STRUCTURE FOR REDUCING CRACKS IN A DIELECTRIC LAYER IN CONTACT WITH METAL

METHOD AND STRUCTURE FOR REDUCING CRACKS IN A DIELECTRIC LAYER IN CONTACT WITH METAL

A method and structure for reducing cracks in a dielectric in contact with a metal structure. The metal structure comprises a first metal layer; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer being stiffer than the first metal layer; a third metal...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LILES BARRY J, WHELAN COLIN S
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method and structure for reducing cracks in a dielectric in contact with a metal structure. The metal structure comprises a first metal layer; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer being stiffer than the first metal layer; a third metal layer disposed on, and in contact with the second metal layer, the second metal layer being stiffer than the third metal layer. An additional metal is included wherein the dielectric layer is disposed between the metal structure and the additional metal.