SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME

A manufacturing method of a semiconductor memory device is provided. The method comprises forming an electrode structure by alternately laminating insulating layers and electrode layers on a substrate; forming a channel hole passing through the electrode structure; forming an information storage fil...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LEE, JEONG GIL, JUNG, YONG CHAE, SOHN, WOONG HEE, YUN, KI HYUN, LEE, MYOUNG BUM, LIM, TAI SOO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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