SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME

A manufacturing method of a semiconductor memory device is provided. The method comprises forming an electrode structure by alternately laminating insulating layers and electrode layers on a substrate; forming a channel hole passing through the electrode structure; forming an information storage film on a sidewall of the channel hole; and forming a semiconductor pattern electrically connected to the substrate on a sidewall of the information storage film. The electrode layers are metal-silicide layers. The insulating layers and the electrode layers are formed in-situ within the same deposition device.