VACUUM EVAPORATION APPARATUS AND VACUUM EVAPORATION METHOD
The present invention relates to a vacuum evaporation apparatus capable of uniformly forming the whole thickness of an organic EL layer. In order to accomplish the objective of the present invention, the vacuum evaporation apparatus includes a guide path for transferring an evaporation material obta...
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| creator | DAIKU HIROYUKI |
| description | The present invention relates to a vacuum evaporation apparatus capable of uniformly forming the whole thickness of an organic EL layer. In order to accomplish the objective of the present invention, the vacuum evaporation apparatus includes a guide path for transferring an evaporation material obtained from an evaporation source, and a discharge member for discharging the evaporation material introduced from the guide path to a target deposition member. The discharging member includes a dispersion container (7) for diffusing the evaporation material, and a plurality of nozzle members (8) protruding toward the target deposition member and having a front end portion thereof with an iris opening to discharge the evaporation material to the target deposition member. Each nozzle member (8) has an inner diameter (D) and a length (L) thereof, and a diameter (D′) of the iris opening (8a). Each discharging member has a unit (13) for regulating the flow rate of the evaporation material in the nozzle member (8) so that the flow rate of the evaporation material in the nozzle member (8) has a predetermined value. The inner diameter (D) mm, and the length (L) mm of the nozzle member (8), and the diameter (D′) mm of the iris opening satisfy an equation, L >= 9D and D′ |
| format | Patent |
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In order to accomplish the objective of the present invention, the vacuum evaporation apparatus includes a guide path for transferring an evaporation material obtained from an evaporation source, and a discharge member for discharging the evaporation material introduced from the guide path to a target deposition member. The discharging member includes a dispersion container (7) for diffusing the evaporation material, and a plurality of nozzle members (8) protruding toward the target deposition member and having a front end portion thereof with an iris opening to discharge the evaporation material to the target deposition member. Each nozzle member (8) has an inner diameter (D) and a length (L) thereof, and a diameter (D′) of the iris opening (8a). Each discharging member has a unit (13) for regulating the flow rate of the evaporation material in the nozzle member (8) so that the flow rate of the evaporation material in the nozzle member (8) has a predetermined value. The inner diameter (D) mm, and the length (L) mm of the nozzle member (8), and the diameter (D′) mm of the iris opening satisfy an equation, L >= 9D and D′ <= 2.7D^2/ L, or L < 9D and D′ <= D/3.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140808&DB=EPODOC&CC=KR&NR=20140098693A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140808&DB=EPODOC&CC=KR&NR=20140098693A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAIKU HIROYUKI</creatorcontrib><title>VACUUM EVAPORATION APPARATUS AND VACUUM EVAPORATION METHOD</title><description>The present invention relates to a vacuum evaporation apparatus capable of uniformly forming the whole thickness of an organic EL layer. In order to accomplish the objective of the present invention, the vacuum evaporation apparatus includes a guide path for transferring an evaporation material obtained from an evaporation source, and a discharge member for discharging the evaporation material introduced from the guide path to a target deposition member. The discharging member includes a dispersion container (7) for diffusing the evaporation material, and a plurality of nozzle members (8) protruding toward the target deposition member and having a front end portion thereof with an iris opening to discharge the evaporation material to the target deposition member. Each nozzle member (8) has an inner diameter (D) and a length (L) thereof, and a diameter (D′) of the iris opening (8a). Each discharging member has a unit (13) for regulating the flow rate of the evaporation material in the nozzle member (8) so that the flow rate of the evaporation material in the nozzle member (8) has a predetermined value. The inner diameter (D) mm, and the length (L) mm of the nozzle member (8), and the diameter (D′) mm of the iris opening satisfy an equation, L >= 9D and D′ <= 2.7D^2/ L, or L < 9D and D′ <= D/3.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAKc3QODfVVcA1zDPAPcgzx9PdTcAwIcAQyQ4MVHP1cFLAo8HUN8fB34WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgaGJgYGlhZmlsaOxsSpAgCCgSpI</recordid><startdate>20140808</startdate><enddate>20140808</enddate><creator>DAIKU HIROYUKI</creator><scope>EVB</scope></search><sort><creationdate>20140808</creationdate><title>VACUUM EVAPORATION APPARATUS AND VACUUM EVAPORATION METHOD</title><author>DAIKU HIROYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20140098693A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>DAIKU HIROYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAIKU HIROYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VACUUM EVAPORATION APPARATUS AND VACUUM EVAPORATION METHOD</title><date>2014-08-08</date><risdate>2014</risdate><abstract>The present invention relates to a vacuum evaporation apparatus capable of uniformly forming the whole thickness of an organic EL layer. In order to accomplish the objective of the present invention, the vacuum evaporation apparatus includes a guide path for transferring an evaporation material obtained from an evaporation source, and a discharge member for discharging the evaporation material introduced from the guide path to a target deposition member. The discharging member includes a dispersion container (7) for diffusing the evaporation material, and a plurality of nozzle members (8) protruding toward the target deposition member and having a front end portion thereof with an iris opening to discharge the evaporation material to the target deposition member. Each nozzle member (8) has an inner diameter (D) and a length (L) thereof, and a diameter (D′) of the iris opening (8a). Each discharging member has a unit (13) for regulating the flow rate of the evaporation material in the nozzle member (8) so that the flow rate of the evaporation material in the nozzle member (8) has a predetermined value. The inner diameter (D) mm, and the length (L) mm of the nozzle member (8), and the diameter (D′) mm of the iris opening satisfy an equation, L >= 9D and D′ <= 2.7D^2/ L, or L < 9D and D′ <= D/3.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; kor |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | VACUUM EVAPORATION APPARATUS AND VACUUM EVAPORATION METHOD |
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