RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE RESIST UNDERLAYER COMPOSITION

The present invention relates to a resist underlayer composition comprising a polymer represented by chemical formula 1 and a solvent, and to a method for forming patterns using the resist underlayer composition. In chemical formula 1, R1a-R1d, R2-R5, and a-d are same as defined in the specification...

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Bibliographische Detailangaben
Hauptverfasser:	KWON, HYO YOUNG, CHEON, HWAN SUNG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention relates to a resist underlayer composition comprising a polymer represented by chemical formula 1 and a solvent, and to a method for forming patterns using the resist underlayer composition. In chemical formula 1, R1a-R1d, R2-R5, and a-d are same as defined in the specification, respectively.