COATING APPARATUS OF SACRIFICIAL METAL ON OXIDE FILM SURFACE OF A SILICON CARBIDE SUBSTRATE USING SACRIFICIAL METAL AND DEFECT ANALYISIS METHOD OF OXIDE FILM SURFACE USING THE SAME

In an apparatus for analyzing defect of an oxide film formed on a silicon carbide (SiC) substrate, an apparatus for coating sacrificial metal according to the present invention comprises a container; a plate which is arranged inside the container and on which the substrate is mounted; a sacrificial metal which is arranged inside the container, is mounted above the plate to be spaced apart from the plate, and is made of metal; and an anode connection terminal and a cathode connection terminal connected to the plate and the sacrificial metal, respectively. When the container is filled with an electrolyte solution, and when a DC voltage is applied through the anode connection terminal and the cathode connection terminal, the sacrificial metal is coated on the oxide film of the substrate.