METHOD FOR FORMING PLANARIZED LAYER CONTAINING UV CURABLE ORGANIC SILOXANE RESIN AND PLANARIZED LAYER FORMED BY THE SAME

The present invention relates to a method for forming a planarized layer containing a UV curable organic siloxane resin and a polarized film formed by the method. The method of forming a planarized film according to the present invention comprises the steps of forming a UV curable organic siloxane r...

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Bibliographische Detailangaben
Hauptverfasser:	SONG, BU SEUP, SON, IN YOUNG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	The present invention relates to a method for forming a planarized layer containing a UV curable organic siloxane resin and a polarized film formed by the method. The method of forming a planarized film according to the present invention comprises the steps of forming a UV curable organic siloxane resin layer on a substrate having a gate; forming a curable organic siloxane resin layer by projecting a UV ray in a downward direction of a surface of the substrate and leaving an uncured organic siloxane resin layer such that the uncured organic siloxane resin layer is not exposed to a UV ray at an upper portion of the gate; removing the uncured organic siloxane resin with a development solution; and etching the organic siloxane resin layer cured by the development solution. In the method of forming a planarized film according to the present invention, a thickness step according to use of a thick metal wire can be preferably planarized to realize a low resistance of the metal wire for development of a high speed TFT of a large scale and a high resolution.