MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME

MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME

In some aspects, a method of forming a memory cell is provided that includes forming a first conductor above a substrate; forming a diode above the first conductor; forming a reversible resistance-switching element above the first conductor using a selective deposition process; and forming a second...

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Hauptverfasser: SCHRICKER APRIL, HERNER S. BRAD, KONEVECKI MICHAEL
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Sprache:eng ; kor
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ELECTRICITY
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creator SCHRICKER APRIL
HERNER S. BRAD
KONEVECKI MICHAEL
description In some aspects, a method of forming a memory cell is provided that includes forming a first conductor above a substrate; forming a diode above the first conductor; forming a reversible resistance-switching element above the first conductor using a selective deposition process; and forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
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title MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
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