MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME

MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME

In some aspects, a method of forming a memory cell is provided that includes forming a first conductor above a substrate; forming a diode above the first conductor; forming a reversible resistance-switching element above the first conductor using a selective deposition process; and forming a second...

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Bibliographische Detailangaben
Hauptverfasser: SCHRICKER APRIL, HERNER S. BRAD, KONEVECKI MICHAEL
Format: Patent
Sprache:eng ; kor
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:In some aspects, a method of forming a memory cell is provided that includes forming a first conductor above a substrate; forming a diode above the first conductor; forming a reversible resistance-switching element above the first conductor using a selective deposition process; and forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.