CMP PAD WITH MIXED PORE STRUCTURE AND MANUFACTURING METHOD FOR THE SAME

The present invention provides a CMP pad comprising a first pore formed inside the pad and the surface thereof and a second pore formed on the surface of the pad, wherein the first pore has a diameter of 20 to 200 μm and a porosity of 10 to 30%, and the second pore has a diameter of 250 to 500 μm an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	BYUN, JAE JUNG, KIM, GEON, JUNG, HUN KUOUNG, JEONG, JAE SANG, KIM, SUNG MIN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention provides a CMP pad comprising a first pore formed inside the pad and the surface thereof and a second pore formed on the surface of the pad, wherein the first pore has a diameter of 20 to 200 μm and a porosity of 10 to 30%, and the second pore has a diameter of 250 to 500 μm and an area of 10 to 40% with respect to the total area of the CMP pad.