HEATER ASSEMBLY FOR CRYSTAL GROWTH APPARATUS

Systems and methods are provided to promote uniform thermal environment to feedstock material (e.g., silicon) in a crucible of a crystal growth apparatus are provided herein. More specifically, a heating system may be arranged in the crystal growth apparatus so as to include at least a first and sec...

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Bibliographische Detailangaben
Hauptverfasser:	RAGHAVAN PARTHASARATHY SANTHANA, CHARTIER CARL, ANDRUKHIV ANDRE, RAVI BHUVARAGASAMY G, LACKEY DAVE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BLASTING CHEMISTRY CRYSTAL GROWTH DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE FURNACES FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL HEATING KILNS LIGHTING MECHANICAL ENGINEERING METALLURGY OPEN SINTERING OR LIKE APPARATUS OVENS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL RETORTS SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WEAPONS
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Beschreibung
Zusammenfassung:	Systems and methods are provided to promote uniform thermal environment to feedstock material (e.g., silicon) in a crucible of a crystal growth apparatus are provided herein. More specifically, a heating system may be arranged in the crystal growth apparatus so as to include at least a first and second heating element which are configured to distribute heat axisymmetrically to the feedstock material and the second heating element that is configured to distribute heat symmetrically to the feedstock material to thereby provide uniform heat distribution to the feedstock material in the crucible to allow for increased consistency in crystal ingot quality.