METHOD AND STRUCTURE FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT

The present invention relates to a method and a structure for an extreme ultraviolet electrostatic chuck with a reduced clamping effect. More particularly, the present invention provides one embodiment of a semiconductor structure. According to the embodiment of the present invention, the semiconductor structure includes a semiconductor substrate, an IC formed on the semiconductor substrate; and a polysilicon layer arranged on the back surface of the semiconductor substrate. [Reference numerals] (52) Provide a semiconductor substrate; (54) Form polysilicon on both front and back surfaces of the semiconductor substrate; (56) Remove the polysilicon from the front surface of the semiconductor substrate; (58) Implant the polysilicon on the back surface of the semiconductor substrate; (608) Expose the photoresist layer using an EUV(extreme ultraviolet) beam; (62) Coat the semiconductor substrate with a photoresist layer on the front surface; (64) Fix the semiconductor substrate on an electronic chuck from the back surface; (66) Flow a gas between the semiconductor substrate and the electronic chuck