METHODS OF TREATING A SEMICONDUCTOR LAYER

Provided is a method of treating a semiconductor layer including a semiconductor material. A method includes making a passivation material touch at least one part of the semiconductor material. The method further includes forming a first region in the semiconductor layer by implanting dopants into t...

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Bibliographische Detailangaben
Hauptverfasser:	GARBER ROBERT ANDREW, METZGER WYATT KEITH, SHAN YINGHUI, CLARK LAURA ANNE, CAO HONGBO, FOUST DONALD FRANKLIN, SHUBA ROMAN, FELDMAN PEABODY SCOTT DANIEL
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Provided is a method of treating a semiconductor layer including a semiconductor material. A method includes making a passivation material touch at least one part of the semiconductor material. The method further includes forming a first region in the semiconductor layer by implanting dopants into the semiconductor material; and forming a chalcogen-rich region. The method also includes forming a second region in the semiconductor layer. The second region includes dopants. Here, the average atom density of the dopant in the second region is greater than that in the first region. A photoelectric convention device is also provided.