NITRIDE BASED TRANSISTOR AND METHOD OF FABRICATING THE SAME

Disclosed are a nitride based transistor and a method of fabricating the same. The nitride based transistor includes an upper surface, a lower surface, a slope connected from the upper surface to the lower surface, a semiconductor stack structure including a nitride based semiconductor layer, and a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAKEYA MOTONOBU, LEE, KANG NYUNG, LEE, KWAN HYUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!