NITRIDE BASED TRANSISTOR AND METHOD OF FABRICATING THE SAME

Disclosed are a nitride based transistor and a method of fabricating the same. The nitride based transistor includes an upper surface, a lower surface, a slope connected from the upper surface to the lower surface, a semiconductor stack structure including a nitride based semiconductor layer, and a first regrowth layer formed on a part of the slope. The first regrowth layer is made of a nitride based semiconductor layer. The composition of the first regrowth layer is different from that of the nitride based semiconductor layer in a part of a lower slope. Thereby, a vertical-type nitride based transistor using a heterojunction structure of the semiconductor stack structure and the first regrowth layer can be provided.