NITRIDE BASED TRANSISTOR AND METHOD OF FABRICATING THE SAME
Disclosed are a nitride based transistor and a method of fabricating the same. The nitride based transistor includes an upper surface, a lower surface, a slope connected from the upper surface to the lower surface, a semiconductor stack structure including a nitride based semiconductor layer, and a...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | TAKEYA MOTONOBU LEE, KANG NYUNG LEE, KWAN HYUN |
| description | Disclosed are a nitride based transistor and a method of fabricating the same. The nitride based transistor includes an upper surface, a lower surface, a slope connected from the upper surface to the lower surface, a semiconductor stack structure including a nitride based semiconductor layer, and a first regrowth layer formed on a part of the slope. The first regrowth layer is made of a nitride based semiconductor layer. The composition of the first regrowth layer is different from that of the nitride based semiconductor layer in a part of a lower slope. Thereby, a vertical-type nitride based transistor using a heterojunction structure of the semiconductor stack structure and the first regrowth layer can be provided. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20140013193A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20140013193A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20140013193A3</originalsourceid><addsrcrecordid>eNrjZLD28wwJ8nRxVXByDHZ1UQgJcvQL9gwO8Q9ScPRzUfB1DfHwd1Hwd1Nwc3QK8nR2DPH0c1cI8XBVCHb0deVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGhiYGBobGhpbGjsbEqQIAW0Epvw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NITRIDE BASED TRANSISTOR AND METHOD OF FABRICATING THE SAME</title><source>esp@cenet</source><creator>TAKEYA MOTONOBU ; LEE, KANG NYUNG ; LEE, KWAN HYUN</creator><creatorcontrib>TAKEYA MOTONOBU ; LEE, KANG NYUNG ; LEE, KWAN HYUN</creatorcontrib><description>Disclosed are a nitride based transistor and a method of fabricating the same. The nitride based transistor includes an upper surface, a lower surface, a slope connected from the upper surface to the lower surface, a semiconductor stack structure including a nitride based semiconductor layer, and a first regrowth layer formed on a part of the slope. The first regrowth layer is made of a nitride based semiconductor layer. The composition of the first regrowth layer is different from that of the nitride based semiconductor layer in a part of a lower slope. Thereby, a vertical-type nitride based transistor using a heterojunction structure of the semiconductor stack structure and the first regrowth layer can be provided.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140205&DB=EPODOC&CC=KR&NR=20140013193A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140205&DB=EPODOC&CC=KR&NR=20140013193A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKEYA MOTONOBU</creatorcontrib><creatorcontrib>LEE, KANG NYUNG</creatorcontrib><creatorcontrib>LEE, KWAN HYUN</creatorcontrib><title>NITRIDE BASED TRANSISTOR AND METHOD OF FABRICATING THE SAME</title><description>Disclosed are a nitride based transistor and a method of fabricating the same. The nitride based transistor includes an upper surface, a lower surface, a slope connected from the upper surface to the lower surface, a semiconductor stack structure including a nitride based semiconductor layer, and a first regrowth layer formed on a part of the slope. The first regrowth layer is made of a nitride based semiconductor layer. The composition of the first regrowth layer is different from that of the nitride based semiconductor layer in a part of a lower slope. Thereby, a vertical-type nitride based transistor using a heterojunction structure of the semiconductor stack structure and the first regrowth layer can be provided.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD28wwJ8nRxVXByDHZ1UQgJcvQL9gwO8Q9ScPRzUfB1DfHwd1Hwd1Nwc3QK8nR2DPH0c1cI8XBVCHb0deVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGhiYGBobGhpbGjsbEqQIAW0Epvw</recordid><startdate>20140205</startdate><enddate>20140205</enddate><creator>TAKEYA MOTONOBU</creator><creator>LEE, KANG NYUNG</creator><creator>LEE, KWAN HYUN</creator><scope>EVB</scope></search><sort><creationdate>20140205</creationdate><title>NITRIDE BASED TRANSISTOR AND METHOD OF FABRICATING THE SAME</title><author>TAKEYA MOTONOBU ; LEE, KANG NYUNG ; LEE, KWAN HYUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20140013193A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKEYA MOTONOBU</creatorcontrib><creatorcontrib>LEE, KANG NYUNG</creatorcontrib><creatorcontrib>LEE, KWAN HYUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKEYA MOTONOBU</au><au>LEE, KANG NYUNG</au><au>LEE, KWAN HYUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NITRIDE BASED TRANSISTOR AND METHOD OF FABRICATING THE SAME</title><date>2014-02-05</date><risdate>2014</risdate><abstract>Disclosed are a nitride based transistor and a method of fabricating the same. The nitride based transistor includes an upper surface, a lower surface, a slope connected from the upper surface to the lower surface, a semiconductor stack structure including a nitride based semiconductor layer, and a first regrowth layer formed on a part of the slope. The first regrowth layer is made of a nitride based semiconductor layer. The composition of the first regrowth layer is different from that of the nitride based semiconductor layer in a part of a lower slope. Thereby, a vertical-type nitride based transistor using a heterojunction structure of the semiconductor stack structure and the first regrowth layer can be provided.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; kor |
| recordid | cdi_epo_espacenet_KR20140013193A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | NITRIDE BASED TRANSISTOR AND METHOD OF FABRICATING THE SAME |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T23%3A12%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TAKEYA%20MOTONOBU&rft.date=2014-02-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20140013193A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |