IMPROVED METHOD OF METAL PLATING SEMICONDUCTORS
An improved metal plating method for a semiconductor includes plating copper onto a metal lower layer using a copper plating bath, immediately after the metal lower layer is selectively plated on a semiconductor wafer. The improved metal plating method can form a current track by performing addition...
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| creator | HAMM GARY KARAYA JR. NARSMOUL WEI LINGYUN |
| description | An improved metal plating method for a semiconductor includes plating copper onto a metal lower layer using a copper plating bath, immediately after the metal lower layer is selectively plated on a semiconductor wafer. The improved metal plating method can form a current track by performing additional metallization until a metal layer is established using the conventional metal plating bath and method thereof. In the process, metal silicide is not formed, and excellent adhesion of a metal to a semiconductor is obtained. The metallized semiconductor can be used in manufacturing a photoelectric device. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20140008501A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20140008501A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20140008501A3</originalsourceid><addsrcrecordid>eNrjZND39A0I8g9zdVHwdQ3x8HdR8HcDsRx9FAJ8HEM8_dwVgl19PZ39_VxCnUP8g4J5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakm8d5CRgaGJgYGBhamBoaMxcaoAqWUm7A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>IMPROVED METHOD OF METAL PLATING SEMICONDUCTORS</title><source>esp@cenet</source><creator>HAMM GARY ; KARAYA JR. NARSMOUL ; WEI LINGYUN</creator><creatorcontrib>HAMM GARY ; KARAYA JR. NARSMOUL ; WEI LINGYUN</creatorcontrib><description>An improved metal plating method for a semiconductor includes plating copper onto a metal lower layer using a copper plating bath, immediately after the metal lower layer is selectively plated on a semiconductor wafer. The improved metal plating method can form a current track by performing additional metallization until a metal layer is established using the conventional metal plating bath and method thereof. In the process, metal silicide is not formed, and excellent adhesion of a metal to a semiconductor is obtained. The metallized semiconductor can be used in manufacturing a photoelectric device.</description><language>eng ; kor</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140121&DB=EPODOC&CC=KR&NR=20140008501A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140121&DB=EPODOC&CC=KR&NR=20140008501A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAMM GARY</creatorcontrib><creatorcontrib>KARAYA JR. NARSMOUL</creatorcontrib><creatorcontrib>WEI LINGYUN</creatorcontrib><title>IMPROVED METHOD OF METAL PLATING SEMICONDUCTORS</title><description>An improved metal plating method for a semiconductor includes plating copper onto a metal lower layer using a copper plating bath, immediately after the metal lower layer is selectively plated on a semiconductor wafer. The improved metal plating method can form a current track by performing additional metallization until a metal layer is established using the conventional metal plating bath and method thereof. In the process, metal silicide is not formed, and excellent adhesion of a metal to a semiconductor is obtained. The metallized semiconductor can be used in manufacturing a photoelectric device.</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND39A0I8g9zdVHwdQ3x8HdR8HcDsRx9FAJ8HEM8_dwVgl19PZ39_VxCnUP8g4J5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakm8d5CRgaGJgYGBhamBoaMxcaoAqWUm7A</recordid><startdate>20140121</startdate><enddate>20140121</enddate><creator>HAMM GARY</creator><creator>KARAYA JR. NARSMOUL</creator><creator>WEI LINGYUN</creator><scope>EVB</scope></search><sort><creationdate>20140121</creationdate><title>IMPROVED METHOD OF METAL PLATING SEMICONDUCTORS</title><author>HAMM GARY ; KARAYA JR. NARSMOUL ; WEI LINGYUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20140008501A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2014</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HAMM GARY</creatorcontrib><creatorcontrib>KARAYA JR. NARSMOUL</creatorcontrib><creatorcontrib>WEI LINGYUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HAMM GARY</au><au>KARAYA JR. NARSMOUL</au><au>WEI LINGYUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>IMPROVED METHOD OF METAL PLATING SEMICONDUCTORS</title><date>2014-01-21</date><risdate>2014</risdate><abstract>An improved metal plating method for a semiconductor includes plating copper onto a metal lower layer using a copper plating bath, immediately after the metal lower layer is selectively plated on a semiconductor wafer. The improved metal plating method can form a current track by performing additional metallization until a metal layer is established using the conventional metal plating bath and method thereof. In the process, metal silicide is not formed, and excellent adhesion of a metal to a semiconductor is obtained. The metallized semiconductor can be used in manufacturing a photoelectric device.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
| title | IMPROVED METHOD OF METAL PLATING SEMICONDUCTORS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T02%3A57%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HAMM%20GARY&rft.date=2014-01-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20140008501A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |