IMPROVED METHOD OF METAL PLATING SEMICONDUCTORS
An improved metal plating method for a semiconductor includes plating copper onto a metal lower layer using a copper plating bath, immediately after the metal lower layer is selectively plated on a semiconductor wafer. The improved metal plating method can form a current track by performing addition...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng ; kor |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | An improved metal plating method for a semiconductor includes plating copper onto a metal lower layer using a copper plating bath, immediately after the metal lower layer is selectively plated on a semiconductor wafer. The improved metal plating method can form a current track by performing additional metallization until a metal layer is established using the conventional metal plating bath and method thereof. In the process, metal silicide is not formed, and excellent adhesion of a metal to a semiconductor is obtained. The metallized semiconductor can be used in manufacturing a photoelectric device. |
---|