IMPROVED METHOD OF METAL PLATING SEMICONDUCTORS

An improved metal plating method for a semiconductor includes plating copper onto a metal lower layer using a copper plating bath, immediately after the metal lower layer is selectively plated on a semiconductor wafer. The improved metal plating method can form a current track by performing addition...

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Bibliographische Detailangaben
Hauptverfasser: HAMM GARY, KARAYA JR. NARSMOUL, WEI LINGYUN
Format: Patent
Sprache:eng ; kor
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Beschreibung
Zusammenfassung:An improved metal plating method for a semiconductor includes plating copper onto a metal lower layer using a copper plating bath, immediately after the metal lower layer is selectively plated on a semiconductor wafer. The improved metal plating method can form a current track by performing additional metallization until a metal layer is established using the conventional metal plating bath and method thereof. In the process, metal silicide is not formed, and excellent adhesion of a metal to a semiconductor is obtained. The metallized semiconductor can be used in manufacturing a photoelectric device.