FINFET WITH HIGH MOBILITY AND STRAIN CHANNEL

FINFET WITH HIGH MOBILITY AND STRAIN CHANNEL

An integrated circuit device comprises: a pin including a gate segment below a gate electrode structure; a source/drain area arranged over the end of the pin and a first conformal layer formed around a part where the source/drain area is embedded. A vertical sidewall gate segment of the first confor...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LAI KAO TING, WU CHI HSI, LI HOU JU, TING KUO CHIANG
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit device comprises: a pin including a gate segment below a gate electrode structure; a source/drain area arranged over the end of the pin and a first conformal layer formed around a part where the source/drain area is embedded. A vertical sidewall gate segment of the first conformal layer lies in parallel. [Reference numerals] (78) Formation of a recess close to the end of a pin; (80) Formation of a conformal layer on the exposed surface of the recess to make the sidewall of the conformal layer and a gate segment to be parallel; (82) Formation of a source/drain area on the conformal layer; (AA) Start; (BB) End