THIN FILM TRANSISTOR SUBSTRATE HAVING METAL OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME

The present invention relates to a thin film transistor substrate including a metal oxide semiconductor and a method for manufacturing the same. The thin film transistor substrate according to the present invention includes: a gate electrode formed on a substrate; a gate insulating film which covers a part of the gate electrode and opens the other part; a semiconductor channel layer overlapped with the part of the gate electrode on the gate insulating film; a gate line which is connected to the exposed other part of the gate electrode and proceeds horizontally on the substrate; a source electrode formed on the surface of one side of the semiconductor channel layer; and a drain electrode formed on the surface of the other side of the semiconductor channel layer to be separated from the source electrode. In the present invention, the device characteristics of a metal oxide semiconductor channel layer can be improved and stability of the same can be assured without damage to the substrate, because the semiconductor channel layer is formed by stacking a gate metal material, a gate insulating material, and a metal oxide semiconductor material and then performing high temperature thermal annealing.